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All etch rates presented here are measured on chips (i.e. diced 4" wafers) crystal bonded to a carrier. The carrier is either a blank Si wafer, a Si wafer spin coated with resist or a Si wafer coated with ALD grown Al2O3.
All etch rates presented here are measured on chips (i.e. diced 4" wafers) crystal bonded to a carrier. The carrier is either a blank Si wafer, a Si wafer spin coated with resist or a Si wafer coated with ALD grown Al2O3.
=== Etch rates ===


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-
|-
|+style="background:Black; color:White"  colspan="3"|'''Recipe nano1.42 on Deep Reactive Ion Etch PEGASUS A-1'''
|+style="background:Black; color:White"  colspan="4"|'''Etch Tests of CSAR, DRIE PEGASUS, A-1'''
|-
|-
! rowspan="5" align="center"| Recipe
| Gasses
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
|-
| Pressure
| 4 mTorr,
Strike: 3 secs @ 15 mTorr
|-
| Power
| 800 W Coil Power,
40 W Platen Power
|-
| Temperature
| -20 degs
|-
| Hardware
| ?
|-
! rowspan="1" align="center"| Conditions
| Conditioning
| Pre-clean: 10 min oxygen clean
5 min oxygen clean between runs
|-
|}
 
 
 
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 80%;"
|-
|+style="background:Black; color:White"  colspan="4"|'''Etch Tests on Deep Reactive Ion Etch PEGASUS A-1'''
|-
|-
|-
|-
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|-
|-
|-
|-
|4" Si wafer with non-patterned ~180 nm CSAR
|Full 4" Si wafer with non-patterned ~180 nm CSAR
|nano1.42
|nano1.42
|56.5 (based on 2 runs)
|~56.5 (based on 2 runs)
|
|
|-
|-
|-
|-
|4" Si wafer with non-patterned ~240 nm CSAR, <br>postbaked 60 sec @ 130 degC
|Full 4" Si wafer with non-patterned ~240 nm CSAR, <br>postbaked 60 sec @ 130 degC
|nano1.42
|nano1.42
|56.5 (based on 2 runs)
|~56.5 (based on 2 runs)
|
|
|-
|-
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|1/4 4" Si wafer with non-patterned ~125 nm CSAR, <br>not crystal bonded to carrier
|1/4 4" Si wafer with non-patterned ~125 nm CSAR, <br>not crystal bonded to carrier
|nano1.42
|nano1.42
|83.3 (based on 3 runs)
|~83.3 (based on 3 runs)
|
|
|-
|-
Line 754: Line 720:
|1/4 4" Si wafer with non-patterned ~125 CSAR, <br>crystal bonded to 4" Si carrier
|1/4 4" Si wafer with non-patterned ~125 CSAR, <br>crystal bonded to 4" Si carrier
|nano1.42
|nano1.42
|54 (based on 1 run)
|~54 (based on 1 run)
|
|
|-
|-
|}
=== Etch rates ===
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-
|+style="background:Black; color:White"  colspan="3"|'''Recipe nano1.42 on Deep Reactive Ion Etch PEGASUS A-1'''
|-
|-
! rowspan="5" align="center"| Recipe
| Gasses
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
|-
| Pressure
| 4 mTorr,
Strike: 3 secs @ 15 mTorr
|-
| Power
| 800 W Coil Power,
40 W Platen Power
|-
| Temperature
| -20 degs
|-
| Hardware
| ?
|-
|-
|Slice of Si wafer with nano-patterned ~150 nm CSAR, <br>crystal bonded to 4" Si carrier
! rowspan="1" align="center"| Conditions
|nano1.42
| Conditioning
|54 (based on 1 run)
| Pre-clean: 10 min oxygen clean
|100 nm structures: ~200 (based on 1 run)<br>50 nm structures: ~190 nm (based on 1 run)<br>30 nm structues: ~100 nm (based on 1 run)
5 min oxygen clean between runs
|-
|-
|}
|}
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