Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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We have experienced problems with removal of CSAR after chlorine-based dry etch, see the file [[:File:DryEtchTestsCSAR.pdf]]. It seems the chlorine etch forms particles of chlorinated CSAR on the surface, and these particles remains on the surface after resist removal with AR-600-71. The C4F8/SF6 etch also forms particles on the surface, but much smaller than those formed in the chlorine etch. It seems these particles are removed after 3 minutes in AR-600-71. | We have experienced problems with removal of CSAR after chlorine-based dry etch, see the file [[:File:DryEtchTestsCSAR.pdf]]. It seems the chlorine etch forms particles of chlorinated CSAR on the surface, and these particles remains on the surface after resist removal with AR-600-71. The C4F8/SF6 etch also forms particles on the surface, but much smaller than those formed in the chlorine etch. It seems these particles are removed after 3 minutes in AR-600-71. | ||
=== How to mount chips in dry etch tools === | |||
All etch rates presented here are measured on chips (i.e. diced 4" wafers) crystal bonded to a carrier. The carrier is either a blank Si wafer, a Si wafer spin coated with resist or a Si wafer coated with ALD grown Al2O3. | |||
=== Etch rates === | === Etch rates === | ||