Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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100 nm lines in ~145 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) with and without agitation at room temperature and at 5 degrees Celsius. Furthermore, same pattern ahs been developed with N50 (standard developer for ZEP520A). | 100 nm lines in ~145 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) with and without agitation at room temperature and at 5 degrees Celsius. Furthermore, same pattern ahs been developed with N50 (standard developer for ZEP520A). | ||
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|19-12-2014, LabSpin A-1, 4000 rpm, 60s, softbaked 60s @ 150degC | |19-12-2014, LabSpin A-1, 4000 rpm, 60s, softbaked 60s @ 150degC | ||
|19-12-2014, JBX9500 E-2, 2nA aperture 5, doses 60-600 µC/cm2, 100 nm lines with 300 nm spaces | |19-12-2014, JBX9500 E-2, 2nA aperture 5, doses 60-600 µC/cm2, 100 nm lines with 300 nm spaces | ||
|22-12-2014, 05-01-2015, Fumehood D-2, misc developers, rinsed in IPA 60s | |22-12-2014, 05-01-2015, Fumehood D-2, misc developers, rinsed in IPA 60s. The cold development was performed with developer stored in refrigerator (Cx2), exact temperature was not measured. | ||
|23-12-2014, 05-01-2015, Zeiss Supra 60VP, 10kV, Inlens detector, stage at ~-5 degrees | |23-12-2014, 05-01-2015, Zeiss Supra 60VP, 10kV, Inlens detector, stage at ~-5 degrees | ||
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