Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 320: | Line 320: | ||
100 nm lines in ~145 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) with and without agitation at room temperature and at 5 degrees Celsius. Furthermore, same pattern ahs been developed with N50 (standard developer for ZEP520A). | 100 nm lines in ~145 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) with and without agitation at room temperature and at 5 degrees Celsius. Furthermore, same pattern ahs been developed with N50 (standard developer for ZEP520A). | ||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: | {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 80%" | ||
|- | |- | ||
|- | |- | ||
|-style="background:Black; color:White" | |-style="background:Black; color:White" | ||
!colspan=" | !colspan="5"|wafer 9.19 Contrast Curve, Processed by TIGRE, Dec-Jan 2014-2015 | ||
|- | |- | ||