Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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|JEOL 9500 E-beam writer, E-1 | |JEOL 9500 E-beam writer, E-1 | ||
|Dosepattern 15nm - 100nm, | |Dosepattern 15nm - 100nm, | ||
dose 120- | dose 120-350 muC/cm2 | ||
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array | |Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array | ||
|- | |- | ||
| Line 113: | Line 113: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|Fumehood, D-3 | |Fumehood, D-3 | ||
|60 sec in X AR 600- | |60 sec in X AR 600-546, | ||
60 sec rinse in IPA, | 60 sec rinse in IPA, | ||
N2 Blow dry | N2 Blow dry | ||