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Created page with " {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" |+ '''Process runs''' |- ! rowspan="2" width="40"| Date ! colspan="4" width="120"| Substrate Informat..."
 
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|-
|-
| 20/11-2014
| 20/11-2014
| 6" Wafer with 210 nm oxide and 1800 nm polysilicon
| 4" Wafer with AZ resist
| standard stepper mask (50 nm barc + 320 nm krf)
| Travka50 pattern
| Si / 50+ %  
| Si / 50+ %  
| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| 10 minute TDESC clean
| danchip/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes  
| danchip/jml/showerhead/prD, 110 cycles or 8:04 minutes  
| S004675
| S004584
! Old showerhead  
! Old showerhead  
|  
|  
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|-
|-
| 1/12-2014
| 1/12-2014
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