Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/original: Difference between revisions

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|-
|-
| 20/11-2014
| 20/11-2014
| 6" Wafer with 210 nm oxide and 1800 nm polysilicon
| 4" Wafer with AZ resist
| standard stepper mask (50 nm barc + 320 nm krf)
| Travka50 pattern
| Si / 50+ %  
| Si / 50+ %  
| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| 10 minute TDESC clean
| danchip/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes  
| danchip/jml/showerhead/prD, 110 cycles or 8:04 minutes  
| S004675
| S004584
! Old showerhead  
! Old showerhead  
|  
|  
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|-
|-
| 1/12-2014
| 1/12-2014

Revision as of 18:21, 18 December 2014

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
20/11-2014 4" Wafer with AZ resist Travka50 pattern Si / 50+ % Pegasus/jmli 10 minute TDESC clean danchip/jml/showerhead/prD, 110 cycles or 8:04 minutes S004584 Old showerhead


1/12-2014 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon crystalbonded on carrier standard stepper mask (50 nm barc + 320 nm krf) Si / 50+ % Pegasus/jmli 10 minute TDESC clean + 45 sec barc etch danchip/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes S004675 New showerhead
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