Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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= Comparison of switched processes =  
= Comparison of switched processes =  


{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"
|-
! rowspan="2" width="100"| Recipe
! rowspan="2" width="20"| Name
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="7" | Etch step
! colspan="3" | Comments
|-
! Time
! Pres.
! C<sub>4</sub>F<sub>8</sub>
! SF<sub>6</sub>
! O<sub>2</sub>
! Coil
! Time
! Pres.
! C<sub>4</sub>F<sub>8</sub>
! SF<sub>6</sub>
! O<sub>2</sub>
! Coil
! Platen
! Showerhead
! Runs
! width="100" | Key words
|-
! rowspan="4" | Process A    <!-- recipe name -->
! Step1 11 cyc <!-- step -->
| rowspan="2" |20      <!-- chiller temp -->
! 4      <!-- dep time -->
| 25      <!-- dep pressure -->
| 200      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 2000      <!-- coil power -->
| 7.0      <!-- etch time -->
| 25(1.5s) 90>>150      <!-- etch pressure -->
| 0      <!-- C4F8 flow -->
| 350(1.5s) 550      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 2800      <!-- coil power -->
| 120>>140(1.5s) 45      <!-- platen power -->
! rowspan="2" | Old      <!-- Showerhead -->
| rowspan="2" |[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA | 1]]      <!-- link processes -->
| rowspan="2" |    <!-- keywords -->
|-
! Step2 44 cyc <!-- step -->
! 4      <!-- dep time -->
| 25      <!-- dep pressure -->
| 200      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 2000      <!-- coil power -->
| 7.0      <!-- etch time -->
| 25(1.5s) 150      <!-- etch pressure -->
| 0      <!-- C4F8 flow -->
| 350(1.5s) 550      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 2800      <!-- coil power -->
| 140(1.5s) 45      <!-- platen power -->
|-
! Step1 11 cyc <!-- step -->
| rowspan="2" |20      <!-- chiller temp -->
! 4      <!-- dep time -->
| 25      <!-- dep pressure -->
| 200      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 2000      <!-- coil power -->
| 7.0      <!-- etch time -->
| 25(1.5s) 90>>150      <!-- etch pressure -->
| 0      <!-- C4F8 flow -->
| 350(1.5s) 550      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 2800      <!-- coil power -->
| 120>>140(1.5s) 45      <!-- platen power -->
! rowspan="2" | New      <!-- Showerhead -->
| rowspan="2" |[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA | 1]]      <!-- link processes -->
| rowspan="2" | Profile improved  <!-- keywords -->
|-
! Step2 44 cyc <!-- step -->
! 4      <!-- dep time -->
| 25      <!-- dep pressure -->
| 200      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 2000      <!-- coil power -->
| 7.0      <!-- etch time -->
| 25(1.5s) 150      <!-- etch pressure -->
| 0      <!-- C4F8 flow -->
| 350(1.5s) 550      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 2800      <!-- coil power -->
| 140(1.5s) 45      <!-- platen power -->
|-
|}


{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"
{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"

Revision as of 15:51, 17 December 2014

Comparison of continuous processes

Process Before (Old showerhead) After (New showerhead)
Name/Type Description/parameters Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004679 Wafer centre
S003900 Wafer edge S004679 Wafer edge
Continuous isotropic silicon etch called isoslow7 1 minute, 10 degrees, 10 mTorr, 80 SF6, 150 W coil, 3 W platen S003900 4" wafer, 50 % load

S00XXX No test yet File:S00XX centre.jpg

Comparison of switched processes

Recipe Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Process A Step1 11 cyc 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 Old 1
Step2 44 cyc 4 25 200 0 0 2000 7.0 25(1.5s) 150 0 350(1.5s) 550 5 2800 140(1.5s) 45
Step1 11 cyc 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 New 1 Profile improved
Step2 44 cyc 4 25 200 0 0 2000 7.0 25(1.5s) 150 0 350(1.5s) 550 5 2800 140(1.5s) 45
Recipe Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Process A Step1 11 cyc 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 Old 1
Step2 44 cyc 4 25 200 0 0 2000 7.0 25(1.5s) 150 0 350(1.5s) 550 5 2800 140(1.5s) 45
Step1 11 cyc 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 New 1 Profile improved
Step2 44 cyc 4 25 200 0 0 2000 7.0 25(1.5s) 150 0 350(1.5s) 550 5 2800 140(1.5s) 45



Recipe description Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Polysilicon etch polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 Old 1 Slightly over-etching to ensure complete absence of grass
polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1 Very aggressive, unusable
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
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