Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA: Difference between revisions

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! width="40" | Comments
! width="40" | Comments
|-
|-
| 3/12-2014
| 18/8-2014
| 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier
| 4" Danchip QC Wafer  
| standard stepper mask (50 nm barc + 320 nm krf)
| 1.5 µm AZ resist, daq2 mask
| Si / 50+ %  
| Si / 10 %  
| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| 10 minute TDESC clean, 10 minute PR strip post process
| danchip/showerhead/Cpoly1, 20 cycles or 2:04 minutes  
| danchip/QC/QCprocA, 55 cycles (11+44) or 10:05 minutes  
| S004724
| S004257
| New showerhead  
! OLD showerhead  
|  
|  
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Revision as of 12:08, 16 December 2014

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
18/8-2014 4" Danchip QC Wafer 1.5 µm AZ resist, daq2 mask Si / 10 % Pegasus/jmli 10 minute TDESC clean, 10 minute PR strip post process danchip/QC/QCprocA, 55 cycles (11+44) or 10:05 minutes S004257 OLD showerhead

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