Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions
No edit summary |
No edit summary |
||
| Line 55: | Line 55: | ||
|- | |- | ||
! | !A | ||
| | |A1 | ||
| | |A2 | ||
| | |A3 | ||
|- | |- | ||
|- | |- | ||
Revision as of 12:51, 12 December 2014
| Settings for Crystal thickness monitor 1 | |||||
| Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
|---|---|---|---|---|---|
| 22-7-2014 | 1.573 (wafer center) | ||||
| B | B1 | B2 | B3 | ||
| C | C1 | C2 | C3 | ||
| D | D1 | D2 | D3 | ||
| Settings for Crystal thickness monitor 2 | |||||
| Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
|---|---|---|---|---|---|
| A | A1 | A2 | A3 | ||
| B | B1 | B2 | B3 | ||
| C | C1 | C2 | C3 | ||
| D | D1 | D2 | D3 | ||