Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly1: Difference between revisions
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| | | 3/12-2014 | ||
| 6" Wafer with 210 nm oxide and 1800 nm polysilicon | | 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier | ||
| standard stepper mask (50 nm barc + 320 nm krf) | | standard stepper mask (50 nm barc + 320 nm krf) | ||
| Si / 50+ % | | Si / 50+ % | ||
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| 10 minute TDESC clean + 45 sec barc etch | | 10 minute TDESC clean + 45 sec barc etch | ||
| danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | ||
| | | S004724 | ||
| New showerhead | |||
| | | | ||
[[file:S004724-01.jpg|150px|frameless ]] | |||
[[file:S004724-02.jpg|150px|frameless ]] | |||
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Revision as of 13:38, 11 December 2014
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 3/12-2014 | 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | S004724 | New showerhead |
|
