Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv: Difference between revisions
No edit summary |
No edit summary |
||
| Line 25: | Line 25: | ||
| danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | ||
| S004675 | | S004675 | ||
! Old showerhead | |||
| | | | ||
[[file:S00459305.jpg|150px|frameless ]] | [[file:S00459305.jpg|150px|frameless ]] | ||
| Line 35: | Line 35: | ||
[[file:s004593-03.jpg|150px|frameless ]] | [[file:s004593-03.jpg|150px|frameless ]] | ||
|- | |- | ||
| | | 1/12-2014 | ||
| 6" Wafer with 210 nm oxide and 1800 nm polysilicon | | 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon crystalbonded on carrier | ||
| standard stepper mask (50 nm barc + 320 nm krf) | | standard stepper mask (50 nm barc + 320 nm krf) | ||
| Si / 50+ % | | Si / 50+ % | ||
| Line 45: | Line 45: | ||
| | | | ||
| | | | ||
|- | |- | ||
|} | |} | ||
Revision as of 13:32, 11 December 2014
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 20/11-2014 | 6" Wafer with 210 nm oxide and 1800 nm polysilicon | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | S004675 | Old showerhead |
|
| 1/12-2014 | 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon crystalbonded on carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | S004675 | ||
