Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv: Difference between revisions
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| 20/11-2014 | |||
| 6" Wafer with 210 nm oxide and 1800 nm polysilicon | |||
| standard stepper mask (50 nm barc + 320 nm krf) | |||
| Si / 50+ % | |||
| Pegasus/jmli | |||
| 10 minute TDESC clean + 45 sec barc etch | |||
| danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | |||
| S004675 | |||
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Revision as of 13:19, 11 December 2014
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 20/11-2014 | 6" Wafer with 210 nm oxide and 1800 nm polysilicon | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | S004675 |
| |
| 20/11-2014 | 6" Wafer with 210 nm oxide and 1800 nm polysilicon | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | S004675 |
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