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Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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! rowspan="2" width="100"| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV
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| rowspan="2" width="100"| 50 cycles, 30 degrees,  2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen
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| S004593
| S00XXX
| 6" wafer
| 8" wafer
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| S00XXX
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[[file:s004593-03.jpg|80px|frameless ]] [[file:s004593-04.jpg|80px|frameless ]]
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| Wafer centre
| Wafer centre
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| [[file:S00XX centre.jpg |250px|frameless ]]
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| S004593
| S00XXXx
| Wafer edge
| Wafer edge
| [[file:S004592 edge.jpg |250px|frameless ]]
| [[file:S00XXX dge.jpg |250px|frameless ]]
| S004679
| S00XXX
| Wafer edge
| Wafer edge
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| [[file:S00xxxx edge.jpg |250px|frameless ]]
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= Comparison of switched processes =  
= Comparison of switched processes =