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Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,579 edits
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,579 edits
Line 60: Line 60:
{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"
{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"
|-
|-
! rowspan="2" width="100"| Recipe
! rowspan="2" width="100"| Recipe description
! rowspan="2" width="20"| Step
! rowspan="2" width="20"| Name
! rowspan="2" width="20"| Temp.
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="6" | Deposition step
Line 84: Line 84:
! width="100" | Key words
! width="100" | Key words
|-
|-
! Baseline   <!-- recipe name -->
! rowspan="6" | Polysilicon etch   <!-- recipe name -->
| -      <!-- step -->
! Original  -      <!-- step -->
| 30      <!-- chiller temp -->
| 30      <!-- chiller temp -->
! 2.3      <!-- dep time -->
! 2.3      <!-- dep time -->
Line 101: Line 101:
| 40      <!-- platen power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-A | 1]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]]      <!-- link processes -->
|    <!-- keywords -->
|    <!-- keywords -->
|-
|-
! -   <!-- recipe name -->
| Cpoly1      <!-- step -->
|       <!-- step -->
| 30      <!-- chiller temp -->
|       <!-- chiller temp -->
! 1.2      <!-- dep time -->
|       <!-- dep time -->
| 10      <!-- dep pressure -->
|       <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
|       <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
|       <!-- SF6 flow -->
| 0    <!-- O2 flow -->
|       <!-- O2 flow -->
| 600      <!-- coil power -->
|       <!-- coil power -->
| 5.0      <!-- etch time -->
|       <!-- etch time -->
| 10      <!-- etch pressure -->
|       <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
|       <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
|       <!-- SF6 flow -->
| 5      <!-- O2 flow -->
|       <!-- O2 flow -->
| 400      <!-- coil power -->
|       <!-- coil power -->
| 40      <!-- platen power -->
|       <!-- platen power -->
| -      <!-- hardware setting -->
|       <!-- hardware setting -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly1 | 1]]      <!-- link processes -->
|     <!-- link processes -->
|    <!-- keywords -->
|     <!-- keywords -->
|-
| Cpoly2      <!-- step -->
| 30      <!-- chiller temp -->
! 1.4      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly2 | 1]]      <!-- link processes -->
|    <!-- keywords -->
|-
| Cpoly3      <!-- step -->
| 30      <!-- chiller temp -->
! 1.6      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly3 | 1]]      <!-- link processes -->
|   <!-- keywords -->
|-
|-
! base-B    <!-- recipe name -->
| Cpoly4       <!-- step -->
| -       <!-- step -->
| 30      <!-- chiller temp -->
| 30      <!-- chiller temp -->
! 2.15       <!-- dep time -->
! 1.8       <!-- dep time -->
| 10      <!-- dep pressure -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 50      <!-- C4F8 flow -->
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| 40      <!-- platen power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-B | 1]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly4 | 1]]      <!-- link processes -->
|    <!-- keywords -->
|    <!-- keywords -->
|-
|-
! base-C    <!-- recipe name -->
| Cpoly5       <!-- step -->
| -       <!-- step -->
| 30      <!-- chiller temp -->
| 30      <!-- chiller temp -->
! 2.15       <!-- dep time -->
! 2.0       <!-- dep time -->
| 10      <!-- dep pressure -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 50      <!-- C4F8 flow -->
Line 161: Line 196:
| 40      <!-- platen power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-B | 1]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly5 | 1]]      <!-- link processes -->
|    <!-- keywords -->
|    <!-- keywords -->
|-
|-
|}
|}
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