Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,416 edits
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{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"
{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;"
|-
|-
! rowspan="2" width="100"| Recipe
! rowspan="2" width="100"| Recipe description
! rowspan="2" width="20"| Step
! rowspan="2" width="20"| Name
! rowspan="2" width="20"| Temp.
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="6" | Deposition step
Line 84: Line 84:
! width="100" | Key words
! width="100" | Key words
|-
|-
! Baseline   <!-- recipe name -->
! rowspan="6" | Polysilicon etch   <!-- recipe name -->
| -      <!-- step -->
! Original  -      <!-- step -->
| 30      <!-- chiller temp -->
| 30      <!-- chiller temp -->
! 2.3      <!-- dep time -->
! 2.3      <!-- dep time -->
Line 101: Line 101:
| 40      <!-- platen power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-A | 1]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]]      <!-- link processes -->
|    <!-- keywords -->
|    <!-- keywords -->
|-
|-
! -   <!-- recipe name -->
| Cpoly1      <!-- step -->
|       <!-- step -->
| 30      <!-- chiller temp -->
|       <!-- chiller temp -->
! 1.2      <!-- dep time -->
|       <!-- dep time -->
| 10      <!-- dep pressure -->
|       <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
|       <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
|       <!-- SF6 flow -->
| 0    <!-- O2 flow -->
|       <!-- O2 flow -->
| 600      <!-- coil power -->
|       <!-- coil power -->
| 5.0      <!-- etch time -->
|       <!-- etch time -->
| 10      <!-- etch pressure -->
|       <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
|       <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
|       <!-- SF6 flow -->
| 5      <!-- O2 flow -->
|       <!-- O2 flow -->
| 400      <!-- coil power -->
|       <!-- coil power -->
| 40      <!-- platen power -->
|       <!-- platen power -->
| -      <!-- hardware setting -->
|       <!-- hardware setting -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly1 | 1]]      <!-- link processes -->
|     <!-- link processes -->
|    <!-- keywords -->
|     <!-- keywords -->
|-
| Cpoly2      <!-- step -->
| 30      <!-- chiller temp -->
! 1.4      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly2 | 1]]      <!-- link processes -->
|    <!-- keywords -->
|-
| Cpoly3      <!-- step -->
| 30      <!-- chiller temp -->
! 1.6      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly3 | 1]]      <!-- link processes -->
|   <!-- keywords -->
|-
|-
! base-B    <!-- recipe name -->
| Cpoly4       <!-- step -->
| -       <!-- step -->
| 30      <!-- chiller temp -->
| 30      <!-- chiller temp -->
! 2.15       <!-- dep time -->
! 1.8       <!-- dep time -->
| 10      <!-- dep pressure -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 50      <!-- C4F8 flow -->
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| 40      <!-- platen power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-B | 1]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly4 | 1]]      <!-- link processes -->
|    <!-- keywords -->
|    <!-- keywords -->
|-
|-
! base-C    <!-- recipe name -->
| Cpoly5       <!-- step -->
| -       <!-- step -->
| 30      <!-- chiller temp -->
| 30      <!-- chiller temp -->
! 2.15       <!-- dep time -->
! 2.0       <!-- dep time -->
| 10      <!-- dep pressure -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 50      <!-- C4F8 flow -->
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| 40      <!-- platen power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-B | 1]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly5 | 1]]      <!-- link processes -->
|    <!-- keywords -->
|    <!-- keywords -->
|-
|-
|}
|}

Revision as of 10:07, 11 December 2014

Comparison of continuous processes

Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004679 Wafer centre
S004592 Wafer edge S004679 Wafer edge
Switched etch of 1.8 µm polysilicon on BOX patterned with DUV 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen S004593 6" wafer

S004679 Wafer centre
S004593 Wafer edge S004679 Wafer edge


Comparison of switched processes

Recipe description Name Temp. Deposition step Etch step Process observations
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Hardware]] Runs Key words
Polysilicon etch Original - 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
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