Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
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! rowspan="2" width="100"| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV | ! rowspan="2" width="100"| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV | ||
| rowspan="2" width="100"| 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen | | rowspan="2" width="100"| 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen | ||
| | | S004593 | ||
| | | 6" wafer | ||
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| S004679 | | S004679 | ||
| Wafer centre | | Wafer centre | ||
| [[file:S004679 centre.jpg |250px|frameless ]] | | [[file:S004679 centre.jpg |250px|frameless ]] | ||
|- | |- | ||
| | | S004593 | ||
| Wafer edge | | Wafer edge | ||
| [[file:S004592 edge.jpg |250px|frameless ]] | | [[file:S004592 edge.jpg |250px|frameless ]] | ||