Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

Jmli (talk | contribs)
No edit summary
Jmli (talk | contribs)
No edit summary
Line 31: Line 31:
| [[file:S004679 edge.jpg |250px|frameless ]]
| [[file:S004679 edge.jpg |250px|frameless ]]
|-
|-
! rowspan="2" width="100"| Switched polysilicon etch on DUV wafer
! rowspan="2" width="100"| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV
| rowspan="2" width="100"| 50 cycles, 30 degrees,  2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen
| rowspan="2" width="100"| 50 cycles, 30 degrees,  2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen
| S004592
| S004592