Jump to content

Specific Process Knowledge/Direct Structure Definition: Difference between revisions

← Older editNewer edit →
VisualWikitext
Choi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, danchip
641 edits
Jehan (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891, Bureaucrats, danchip, Administrators
1,093 edits
Line 121: Line 121:


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Throughput (when mask/stamp/pattern available)
!Throughput (when mask/stamp/pattern available)
|medium: 5-10 wafers/hour depending on exposure time
|medium: 5-10 wafers/hour depending on exposure time
Line 132: Line 132:


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Min/max featuresize
!Min/max featuresize
|1µm - wafer size
|1µm - wafer size
Line 140: Line 140:
|100µm - wafer size
|100µm - wafer size
|saw blade width 60µm or 200µm. Has to cut full diameter of wafer.
|saw blade width 60µm or 200µm. Has to cut full diameter of wafer.
|-
|-
|-style="background:LightGrey; color:black"
!Min/max aspect-ratio
|NA
|2-Photon Polymerization Lithography ??
|Nano Imprint Lithography ??
|Depends on slope and roughness of sidewalls.
|50-100µm width/~1mm depth, sloping walls
|60µm width/2mm depth, vertical walls
|-
|-


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Direct_Structure_Definition"