Specific Process Knowledge/Direct Structure Definition: Difference between revisions
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*PMMA | *PMMA | ||
| | | | ||
* | *Topas 5013L-10 | ||
*Topas 8007S-04 | |||
*PS (BASF 158k) | |||
*Others available upon request and approval | |||
| | | | ||
*Silicon | *Silicon | ||
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|Sample with resist.<br> A 3D CAD model file in GWL format. Included software can convert 3D model in STL (Standard Tessellation Language) format to GWL files. | |Sample with resist.<br> A 3D CAD model file in GWL format. Included software can convert 3D model in STL (Standard Tessellation Language) format to GWL files. | ||
|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | |Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | ||
|A stamp/shim with the wanted pattern, usually in Ni or Al. | |A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. | ||
|A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Lithography/UVLithography/Mask Design| Clewin5]] can convert GDS and CIF files to DXF format. | |A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Lithography/UVLithography/Mask Design| Clewin5]] can convert GDS and CIF files to DXF format. | ||
|Number of lines and pitch in each direction. Your wafer. | |Number of lines and pitch in each direction. Your wafer. | ||
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|slow: 1 sample/day | |slow: 1 sample/day | ||
|medium: 5-10 wafers/hour depending on imprint time | |medium: 5-10 wafers/hour depending on imprint time | ||
|fast: 10- | |fast: 10-200/hour | ||
|medium-slow: 0.1-1 wafers/hour depending on pattern complexity | |medium-slow: 0.1-1 wafers/hour depending on pattern complexity | ||
|medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s) | |medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s) | ||
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|2-Photon Polymerization Lithography ?? | |2-Photon Polymerization Lithography ?? | ||
|Nano Imprint Lithography ?? | |Nano Imprint Lithography ?? | ||
| | |Depends on slope and roughness of sidewalls. | ||
|50-100µm width/~1mm depth, sloping walls | |50-100µm width/~1mm depth, sloping walls | ||
|60µm width/2mm depth, vertical walls | |60µm width/2mm depth, vertical walls | ||
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|resist developing/baking, ?? 2-Photon Polymerization Lithography | |resist developing/baking, ?? 2-Photon Polymerization Lithography | ||
|Dry Etch back (RIE), ?? Nano Imprint Lithography | |Dry Etch back (RIE), ?? Nano Imprint Lithography | ||
| | |Sprue/runner has to be broken or cut off. | ||
|Sample cleaning with Ultrasound etc. | |Sample cleaning with Ultrasound etc. | ||
|None | |None | ||
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|3D | |3D | ||
|2D. different depths possible | |2D. different depths possible | ||
|2D. | |2D. Different depths possible. | ||
|2D. different depths possible | |2D. different depths possible | ||
|1D. different depths possible | |1D. different depths possible | ||
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*50 mm wafers | *50 mm wafers | ||
*100 mm wafers | *100 mm wafers | ||
| | | | ||
*Flat disk tool: ø50mm disc | |||
*Luer tool: ø50mm disc with 12 Luer connectors | |||
*Microscope slide tool: 26x76 mm2 | |||
| | | | ||
*small samples | *small samples | ||
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|2-Photon Polymerization Lithography | |2-Photon Polymerization Lithography | ||
|Nano Imprint Lithography | |Nano Imprint Lithography | ||
| | |Nickel, aluminium, steel, FDTS | ||
|Laser Micromachining Tool | |Laser Micromachining Tool | ||
|Dicing saw | |Dicing saw | ||