Jump to content

Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions

BGE (talk | contribs)
No edit summary
BGE (talk | contribs)
No edit summary
Line 6: Line 6:
*Nanoman - ''AFM for measuring nano structures''
*Nanoman - ''AFM for measuring nano structures''


===High Aspect ratio structures===
'''High Aspect ratio structures'''
 
The fact that the tips of the profilers and the AFM are shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 <math>\mu</math>m wide trench is etched deeper than approximately 18 <math>\mu</math>m, the tip of the Dektak will not be able to reach the bottom. In this case the only solution is to cleave the sample along a line that is perpendicular to the trench and then put it in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]].
The fact that the tip is shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 <math>\mu</math>m wide trench is etched deeper than approximately 18 <math>\mu</math>m, the tip of the Dektak will not be able to reach the bottom. In this case the only solution is to cleave the sample along a line that is perpendicular to the trench and then put it in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]].


===Comparing the two profilers and the AFM===
===Comparing the two profilers and the AFM===