Specific Process Knowledge/Lithography/Baking

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Comparing baking methods

	Hotplate: 90-110C	Hotplate 1 (SU8) and 2	Fume hood hotplates	Oven 90C	Oven: 110C - 250C	Oven 250C
Purpose	Programmable contact bake Soft bake PEB	Programmable, ramped contact bake Soft bake of SU-8 PEB of SU-8	Manual contact bake Soft bake	Manual convection bake Soft bake	Manual convection bake Hard bake Post-exposure bake	Manual convection bake Dehydration
Temperature	Maximum 120°C	Maximum 250°C	Maximum 300°C Maximum temperature may be limited on the individual hotplate	Fixed at 90°C	110 - 250°C Return to 110°C after use	Fixed at 250°C
Substrate size	50 mm wafer 100 mm wafer 150 mm wafer	pieces 50 mm wafers 100 mm wafers 150 mm wafer 200 mm wafer	pieces 50 mm wafers 100 mm wafers 150 mm wafer	100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers
Allowed materials	All substrates Film or pattern of all types	Silicon, glass, and polymer substrates Film or pattern of all types except type IV	Respect the allowed materials on the associated spin coater	Silicon, glass, and polymer substrates Film or pattern of all types	Silicon, glass, and polymer substrates Film or pattern of all types	Silicon, glass, and high Tg polymer substrates Film or pattern of all types except resist
Restrictions (Not allowed)		III-V, copper, steel substrates Pb, Te films	III-V substrates unless specifically stated Respect the restrictions on the associated spin coater	III-V, copper, steel substrates	III-V, low Tg polymer, copper, steel substrates	III-V, low Tg polymer, copper, steel substrates Resist is not allowed

Hotplates

Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C

Hotplate 1 (SU8) and Hotplate 2 (SU8)

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Fume hood hotplates

This section is under construction

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist on the associated spin coater.

• Fumehood hotplates
• 
  Fume hood hotplate for Manual Spinner (Polymers) located in the fume hood in C-1. Limited to 300°C.
• 
  Fume hood hotplate for Manual Spinner 1 located in the fume hood in E-5. Limited to 210°C.
• 
  Fume hood hotplate (Si) for Spin coater: Manual Labspin located in the fume hood in A-5. Limited to 220°C.
• 
  Fume hood hotplate (III-V) for Spin coater: Manual Labspin located in the fume hood in A-5. Right: High temperature; limited to 280°C. Left: Low temperature; limited to 125°C.

Ovens

Oven 90C

Oven 90C situated in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 110C - 250C

Oven: 110C - 250C situated in C-1

Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.

The set-point can be varied, but should always be returned to 110°C after use.

The user manual, and contact information can be found in LabManager: Oven: 110C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment situated in C-1

See Oven 250C