Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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! RIE | ! RIE | ||
! AOE | ! AOE | ||
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|'''General description''' | |'''General description''' | ||
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*Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch | *Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch | ||
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|'''Possible masking materials''' | |'''Possible masking materials''' | ||
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*(Poly)Silicon | *(Poly)Silicon | ||
*Aluminium | *Aluminium | ||
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|'''Etch rate''' | |'''Etch rate''' | ||
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*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | *Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | ||
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|'''Batch size''' | |'''Batch size''' | ||
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*1 wafer at a time | *1 wafer at a time | ||
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|'''Size of substrate''' | |'''Size of substrate''' | ||
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*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | *6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | ||
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|'''Allowed materials''' | |'''Allowed materials''' | ||
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