Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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==Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide== | ==Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide== | ||
{| border=" | {| border="2" cellspacing="0" cellpadding="4" align="center" | ||
! | ! | ||
! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ||
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! AOE | ! AOE | ||
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|General description | |'''General description''' | ||
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*Isotropic etch | *Isotropic etch | ||
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*Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch | *Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch | ||
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|Possible masking materials | |'''Possible masking materials''' | ||
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*Photoresist | *Photoresist | ||
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*Aluminium | *Aluminium | ||
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|Etch rate | |'''Etch rate''' | ||
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~75 nm/min (Thermal oxide) in BHF | *~75 nm/min (Thermal oxide) in BHF | ||
~90 nm/min (Thermal oxide) in SIO Etch | *~90 nm/min (Thermal oxide) in SIO Etch | ||
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*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | ||
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*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | *Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | ||
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|Batch size | |'''Batch size''' | ||
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*1-25 wafers at a time | *1-25 wafers at a time | ||
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*1 wafer at a time | *1 wafer at a time | ||
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|Size of substrate | |'''Size of substrate''' | ||
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*4" wafers | *4" wafers | ||
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*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | *6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | ||
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|Allowed materials | |'''Allowed materials''' | ||
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*Silicon | *Silicon |
Revision as of 13:27, 31 January 2008
Silicon oxide can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the oxide on the surface (backside and front side) of a wafer or for isotrotropic etching. Dry etching etches anisotropic. It etches one side of the wafer at a time and can be used to etch structures with several masking materials.
Etch of silicon oxide can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide
Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | RIE | AOE | |
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General description |
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Possible masking materials |
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Etch rate |
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Batch size |
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Size of substrate |
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Allowed materials |
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