Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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==Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon== | ==Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon== | ||
{| border=" | {| border="2" cellspacing="0" cellpadding="5" align="center" | ||
! | ! | ||
! KOH | ! KOH | ||
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! RIE | ! RIE | ||
! ASE | ! ASE | ||
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|General description | |'''General description''' | ||
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*Anisotropic etch in the (100)-plan | *Anisotropic etch in the (100)-plan | ||
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*As RIE but better for high aspect ratio etching and deep etches (higher etch rate) | *As RIE but better for high aspect ratio etching and deep etches (higher etch rate) | ||
*Good selectivity to photoresist | *Good selectivity to photoresist | ||
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|Possible masking materials | |'''Possible masking materials''' | ||
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*Silicon Nitride | *Silicon Nitride | ||
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*Silicon Nitride | *Silicon Nitride | ||
*Aluminium | *Aluminium | ||
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|Etch rate | |'''Etch rate''' | ||
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*Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min | *Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min | ||
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*~100-200 nm/min, highly dependent on doping level | *~100-200 nm/min, highly dependent on doping level | ||
|<40nm/min to >600nm/min depending on recipe parameters and mask design | | | ||
|<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. | *<40nm/min to >600nm/min depending on recipe parameters and mask design | ||
|- | | | ||
|Size of substrate | *<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. | ||
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|'''Size of substrate''' | |||
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*4" in our standard bath | *4" in our standard bath | ||
*4", 2" in "Fumehood KOH" | *4", 2" in "Fumehood KOH" | ||
| | |||
*4" in our standard bath | |||
|4" (or smaller with carrier) | | | ||
|6" (when it is set up for 6") and 4" (or smaller if you have a carrier) | *4" (or smaller with carrier) | ||
|- | | | ||
|Batch size | *6" (when it is set up for 6") and 4" (or smaller if you have a carrier) | ||
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|'''Batch size''' | |||
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*25 wafers at a time | *25 wafers at a time | ||
*1-5 wafers in "Fumehood KOH" | *1-5 wafers in "Fumehood KOH" | ||
|25 wafers at a time | | | ||
|One wafer at a time | *25 wafers at a time | ||
|One wafer at a time | | | ||
|- | *One wafer at a time | ||
|Allowed materials | | | ||
*One wafer at a time | |||
|-valign="top" | |||
|'''Allowed materials''' | |||
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*Silicon | *Silicon | ||