Specific Process Knowledge/Doping: Difference between revisions
| Line 14: | Line 14: | ||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with B or P | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with B or P | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorous glass PBSG or germanium doped glass | *[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorous glass PBSG or germanium doped glass | ||
* | *Ion implantation | ||