Specific Process Knowledge/Doping: Difference between revisions
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![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | ![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | ||
![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped Poly Si]] | ![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped Poly Si]] | ||
!Ion implantation | |||
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|Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | |Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | ||
|Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | |Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | ||
|Dopant ions are implanted into the substrate by a high-energy ion beam. Contrary the other doping techniques the doping concentration has a peak inside the substrate when introduced by ion-implantation. Ion implantation cannot be done at Danchip but IBS (Ion Beam Services) offers ion-beam implantation as a service. See more at the homepage of IBS: http://www.ion-beam-services.com/about_us.htm. When wafers return from Ion implantation they need a clean before entering the cleanroom. Activation and redistribution of the dopants is required and is done by a high temperature anneal (600°C-1000°C) in the high temperature furnaces or by rapid thermal anneal. | |||
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*560°C - 620°C | *560°C - 620°C | ||
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*Room temperature | |||
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*Phosphorous (PH<sub>3</sub>) | *Phosphorous (PH<sub>3</sub>) | ||
*Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | ||
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*See http://www.ion-beam-services.com/about_us.htm. | |||
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*100 mm wafers (Boron and Phosphorous) | *100 mm wafers (Boron and Phosphorous) | ||
*150 mm wafers (only Boron) | *150 mm wafers (only Boron) | ||
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*See http://www.ion-beam-services.com/about_us.htm. | |||
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*Oxide | *Oxide | ||
*Nitride | *Nitride | ||
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*See http://www.ion-beam-services.com/about_us.htm. | |||
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