Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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! 28 wt% KOH sat. with IPA | ! 28 wt% KOH sat. with IPA | ||
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|General description | |'''General description''' | ||
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Etch of Si(100) | Etch of Si(100) | ||
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Etch of Si(100) with boron etch-stop | Etch of Si(100) with boron etch-stop | ||
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|Chemical solution | |'''Chemical solution''' | ||
|KOH:H<math>_2</math>O 500 g : 1000 ml | |KOH:H<math>_2</math>O 500 g : 1000 ml | ||
|KOH:H<math>_2</math>O:IPA 500 g : 1000 ml : ?? ml | |KOH:H<math>_2</math>O:IPA 500 g : 1000 ml : ?? ml | ||
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|Process temperature | |'''Process temperature''' | ||
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70 <sup>o</sup>C | *60 <sup>o</sup>C | ||
*70 <sup>o</sup>C | |||
*80 <sup>o</sup>C (standard - fast etch) | |||
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*70 <sup>o</sup>C | |||
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|Possible masking materials | |'''Possible masking materials''' | ||
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Stoichiometric Si<math>_3</math>N<math>_4</math> | *Stoichiometric Si<math>_3</math>N<math>_4</math> | ||
*Si-rich Si<math>_3</math>N<math>_4</math> | |||
Si-rich Si<math>_3</math>N<math>_4</math> | *PECVD Si<math>_3</math>N<math>_4</math> | ||
*Thermal SiO<math>_2</math> | |||
PECVD Si<math>_3</math>N<math>_4</math> | |||
Thermal SiO<math>_2</math> | |||
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Stoichiometric Si<math>_3</math>N<math>_4</math> | *Stoichiometric Si<math>_3</math>N<math>_4</math> | ||
*Si-rich Si<math>_3</math>N<math>_4</math> | |||
Si-rich Si<math>_3</math>N<math>_4</math> | *PECVD Si<math>_3</math>N<math>_4</math> | ||
*Thermal SiO<math>_2</math> | |||
PECVD Si<math>_3</math>N<math>_4</math> | |||
Thermal SiO<math>_2</math> | |||
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|Etch rate | |'''Etch rate''' | ||
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~0.4 µm/min (60 <sup>o</sup>C) | *~0.4 µm/min (60 <sup>o</sup>C) | ||
*~0.7 µm/min (70 <sup>o</sup>C) | |||
~0.7 µm/min (70 <sup>o</sup>C) | *~1.3 µm/min (80 <sup>o</sup>C) | ||
~1.3 µm/min (80 <sup>o</sup>C) | |||
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~0.2 µm/min (70 <sup>o</sup>C) | *~0.2 µm/min (70 <sup>o</sup>C) | ||
:in p<sup>++</sup> (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>) | |||
in p<sup>++</sup> (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>) | |||
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|Roughness | |'''Roughness''' | ||
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Typical: 100-600 Å | Typical: 100-600 Å | ||
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|Batch size | |'''Batch size''' | ||
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1-25 wafers at a time | 1-25 wafers at a time | ||
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1-25 wafer at a time | 1-25 wafer at a time | ||
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|Size of substrate | |'''Size of substrate''' | ||
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4" wafers | 4" wafers | ||
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4" wafers | 4" wafers | ||
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|Allowed materials | |'''Allowed materials''' | ||
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*Silicon | *Silicon | ||