Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
| Line 16: | Line 16: | ||
===PolySi Etch data=== | ===PolySi Etch data=== | ||
{| border=" | {| border="2" cellspacing="0" cellpadding="4" align="left" | ||
! | ! | ||
! PolySi Etch @ room temperature | ! PolySi Etch @ room temperature | ||
|- | |- | ||
|General description | |'''General description''' | ||
| | | | ||
Etch of poly-si/Si(100) | Etch of poly-si/Si(100) | ||
|- | |- | ||
|Chemical solution | |'''Chemical solution''' | ||
|HNO<sub>3</sub> : BHF : H<sub>2</sub>O (20 : 1 : 20) | |HNO<sub>3</sub> : BHF : H<sub>2</sub>O (20 : 1 : 20) | ||
|- | |- | ||
|Process temperature | |'''Process temperature''' | ||
|Room temperature | |Room temperature | ||
|- | |- | ||
|Possible masking materials | |'''Possible masking materials''' | ||
| | | | ||
*Photoresist(min. 2.2 µm is recommended) | *Photoresist(min. 2.2 µm is recommended) | ||
*LPCVD-oxide (TEOS) | *LPCVD-oxide (TEOS) | ||
|- | |- | ||
|Etch rate | |'''Etch rate''' | ||
| | | | ||
*R<sub>Si</sub> ~1000-2000 Å/min (depending on doping level) | *R<sub>Si</sub> ~1000-2000 Å/min (depending on doping level) | ||
| Line 42: | Line 42: | ||
*Photoresist (2.2 µm) withstand ~20-30 min | *Photoresist (2.2 µm) withstand ~20-30 min | ||
|- | |- | ||
|Batch size | |'''Batch size''' | ||
| | | | ||
1-25 wafers at a time | 1-25 wafers at a time | ||
|- | |- | ||
|Size of substrate | |'''Size of substrate''' | ||
| | | | ||
2-4" wafers | 2-4" wafers | ||
|- | |- | ||
|} | |} | ||