Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
| Line 21: | Line 21: | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
|'''Resist''' | |'''Resist''' | ||
|'''Polarity''' | |width=100|'''Polarity''' | ||
|'''Spectral sensitivity''' | |||
|'''Manufacturer''' | |'''Manufacturer''' | ||
|'''Comments''' | |width=200|'''Comments''' | ||
|'''Technical reports''' | |width=100|'''Technical reports''' | ||
|'''[[Specific_Process_Knowledge/Lithography/Coaters|Spin Coating]]''' | |'''[[Specific_Process_Knowledge/Lithography/Coaters|Spin Coating]]''' | ||
|'''[[Specific_Process_Knowledge/Lithography/UVExposure|Exposure]]''' | |'''[[Specific_Process_Knowledge/Lithography/UVExposure|Exposure]]''' | ||
|'''[[Specific_Process_Knowledge/Lithography/Development|Developer]]''' | |'''[[Specific_Process_Knowledge/Lithography/Development|Developer]]''' | ||
|'''Rinse''' | |'''Rinse''' | ||
|'''Remover''' | |width=100|'''Remover''' | ||
|'''Process flows (in docx-format)''' | |'''Process flows (in docx-format)''' | ||
| Line 38: | Line 39: | ||
|'''AZ 5214E''' | |'''AZ 5214E''' | ||
|Positive but the image can be reversed | |Positive but the image can be reversed | ||
|310 - 420 nm | |||
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. | |Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. | ||
| Line 66: | Line 68: | ||
|'''AZ 4562''' | |'''AZ 4562''' | ||
|Positive | |Positive | ||
|310 - 440 nm | |||
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|For process with resist thickness between 6 and 25 µm. | |For process with resist thickness between 6 and 25 µm. | ||
| Line 90: | Line 93: | ||
|'''AZ MiR 701''' | |'''AZ MiR 701''' | ||
|Positive | |Positive | ||
|310 - 445 nm | |||
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|High selectivity for dry etch. | |High selectivity for dry etch. | ||
| Line 108: | Line 112: | ||
|'''AZ nLOF 2020''' | |'''AZ nLOF 2020''' | ||
|Negative | |Negative | ||
|310 - 375 nm | |||
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|Negative sidewalls for lift-off. | |Negative sidewalls for lift-off. | ||
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|'''SU-8''' | |'''SU-8''' | ||
|Negative | |Negative | ||
|350 - 400 nm | |||
|[http://microchem.com/Prod-SU82000.htm Microchem] | |[http://microchem.com/Prod-SU82000.htm Microchem] | ||
| | |High aspect ratio. | ||
|[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | |[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | |[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | ||
| Line 137: | Line 143: | ||
|[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]] | |[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]] | ||
|IPA | |IPA | ||
|Plasma ashing can remove crosslinked SU8 | |Plasma ashing can remove crosslinked SU8 | ||
|[[media:Process_Flow_SU8_70um.docx|Process_Flow_SU8_70um.docx]] | |[[media:Process_Flow_SU8_70um.docx|Process_Flow_SU8_70um.docx]] | ||
Revision as of 16:45, 11 November 2014
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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.
Mask Design
In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.
Please read more details here: Mask Design
Resist Overview
| Resist | Polarity | Spectral sensitivity | Manufacturer | Comments | Technical reports | Spin Coating | Exposure | Developer | Rinse | Remover | Process flows (in docx-format) |
| AZ 5214E | Positive but the image can be reversed | 310 - 420 nm | AZ Electronic Materials | Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. | AZ5214E.pdf | SSE,
KS Spinner or |
KS Aligner, | AZ 351B developer
or |
DI water | Acetone | |
| AZ 4562 | Positive | 310 - 440 nm | AZ Electronic Materials | For process with resist thickness between 6 and 25 µm. | AZ4500.pdf | SSE or | KS Aligner, | AZ 351B developer
or |
DI water | Acetone | Process_Flow_thick_AZ4562.docx |
| AZ MiR 701 | Positive | 310 - 445 nm | AZ Electronic Materials | High selectivity for dry etch. | AZ_MiR_701.pdf | Spin Track 1 + 2 | KS Aligner, | AZ 726 MIF developer | DI water | Remover 1165 | Process_Flow_AZ_MiR701.docx |
| AZ nLOF 2020 | Negative | 310 - 375 nm | AZ Electronic Materials | Negative sidewalls for lift-off. | AZ_nLOF_2020.pdf | Spin Track 1 + 2 | KS Aligner, | AZ 726 MIF developer | DI water | Remover 1165 | Process_Flow_AZ_nLOF_2020.docx |
| SU-8 | Negative | 350 - 400 nm | Microchem | High aspect ratio. | SU-8_DataSheet_2005.pdf, SU-8_DataSheet_2075.pdf | KS Spinner | Aligner-6inch,
KS Aligner or |
mr-Dev 600 developer (PGMEA) | IPA | Plasma ashing can remove crosslinked SU8 | Process_Flow_SU8_70um.docx |