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Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin coater: Manual Labspin]]
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin coater: Manual Labspin]]
|'''Positive process:'''
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


23-33 mJ/cm<sup>2</sup> per µm resist for i-line.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or


½ dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
 
'''Reverse process:'''
 
10.5 mJ/cm<sup>2</sup> per µm resist for i-line, followed by 210 mJ/cm<sup>2</sup> flood exposure after reversal bake.
 
½ dose for broadband exposure.
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]