Specific Process Knowledge: Difference between revisions
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!Technique/Method | !Technique/Method | ||
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|[[Specific Process Knowledge/Characterization|Characterization]] | |rowspan="12" valign="top"|[[Specific Process Knowledge/Characterization|Characterization]] | ||
|Sample Imaging, XY dimensions | |Sample Imaging, XY dimensions | ||
|Microscopy: optical, SEM, AFM | |Microscopy: optical, SEM, AFM | ||
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|Sample Topography | |Sample Topography | ||
|AFM, Profiling with stylus or optical | |AFM, Profiling with stylus or optical | ||
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|Film thickness and optical constants | |Film thickness and optical constants | ||
|Ellipsometry, Reflectometry, Prism Coupling | |Ellipsometry, Reflectometry, Prism Coupling | ||
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|Film Stress | |Film Stress | ||
|Profiling with stylus or optical | |Profiling with stylus or optical | ||
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|Wafer thickness | |Wafer thickness | ||
|Micrometer gauge | |Micrometer gauge | ||
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|Element analysis | |Element analysis | ||
|XPS, EDX, SIMS | |XPS, EDX, SIMS | ||
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|Contact Angle | |Contact Angle | ||
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|Resistivity | |Resistivity | ||
|Four point probe, Probe station | |Four point probe, Probe station | ||
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|Doping level/Carrier density | |Doping level/Carrier density | ||
|ECV (Electrochemical Capacitance-Voltage) -profiler | |ECV (Electrochemical Capacitance-Voltage) -profiler | ||
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|Direct Bandgap | |Direct Bandgap | ||
|Photoluminescence | |Photoluminescence | ||
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|Lattice mismatch | |Lattice mismatch | ||
|X-ray diffractometer | |X-ray diffractometer | ||
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|Defects/contamination | |Defects/contamination | ||
|Particle/defect counter | |Particle/defect counter | ||
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!Techniques | !Techniques | ||
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|[[Specific Process Knowledge/Back-end processing|Back-end processing]] | |rowspan="3" valign="top"|[[Specific Process Knowledge/Back-end processing|Back-end processing]] | ||
|Chip/die mounting | |Chip/die mounting | ||
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|Wire bonding | |Wire bonding | ||
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|Dicing | |Dicing | ||
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Revision as of 16:05, 10 November 2014
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