Specific Process Knowledge/Lithography/Baking: Difference between revisions
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image:FumehoodHotplate in C-1.jpg|Fume hood hotplate for [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spinner_.28Polymers.29|Manual Spinner (Polymers)]] located in the fume hood in C-1. | image:FumehoodHotplate in C-1.jpg|Fume hood hotplate for [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spinner_.28Polymers.29|Manual Spinner (Polymers)]] located in the fume hood in C-1. | ||
image:FumehoodHotplate in E-5.jpg|Fume hood hotplate for [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spinner_1|Manual Spinner 1]] located in the fume hood in E-5. | image:FumehoodHotplate in E-5.jpg|Fume hood hotplate for [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spinner_1|Manual Spinner 1]] located in the fume hood in E-5. |
Revision as of 20:50, 6 November 2014
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Comparing baking methods
Hotplate: 90-110C | Hotplate 1 (SU8) and 2 | Fume hood hotplates | Oven 90C | Oven: 120C - 250C | Oven 250C | |
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Purpose |
Programmable contact bake
|
Programmable, ramped contact bake
|
Manual contact bake
|
Manual convection bake
|
Manual convection bake
|
Manual convection bake
|
Temperature |
Maximum 120°C |
Maximum 250°C |
Maximum 300°C Maximum temperature may be limited on the individual hotplate |
Fixed at 90°C |
120 - 250°C Return to 120°C after use |
Fixed at 250°C |
Substrate size |
|
|
|
|
|
|
Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and polymer substrates Film or pattern of all types except type IV |
Respect the allowed materials on the associated spin coater |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and high Tg polymer substrates Film or pattern of all types except resist |
Restrictions | III-V, copper, steel substrates
Pb, Te films |
III-V substrates unless specifically stated
Respect the restrictions on the associated spin coater |
III-V substrates
Pb, Te films |
III-V, copper, steel substrates | Resist is not allowed |
Hotplates
Hotplate: 90-110C
Hotplate: 90-110C is used for baking of 2" - 6" wafers.
The user manual, and contact information can be found in LabManager: Hotplate: 90-110C
Hotplate 1 (SU8) and Hotplate 2 (SU8)
We have two dedicated SU-8 hotplates in C-1.
Users can control the ramp-time, the baking temperature, and the baking time.
The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)
Fume hood hotplates
This section is under construction
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
-
Fume hood hotplate for Manual Spinner (Polymers) located in the fume hood in C-1.
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Fume hood hotplate for Manual Spinner 1 located in the fume hood in E-5.
-
Fume hood hotplate (Si) for Spin coater: Manual Labspin located in the fume hood in A-5.
-
Fume hood hotplate (III-V) for Spin coater: Manual Labspin located in the fume hood in A-5.
Ovens
Oven 90C
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
The user manual, and contact information can be found in LabManager: Oven 90C
Oven: 120C - 250C
Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist. The set-point can be varied, but should always be returned to 120°C after use.
The user manual, and contact information can be found in LabManager: Oven: 120C - 250C
Oven 250C for pretreatment
See Oven 250C