Specific Process Knowledge/Lithography/Baking: Difference between revisions
Line 165: | Line 165: | ||
<gallery caption="Fumehood hotplates" widths="220px" heights="225px" perrow="5"> | <gallery caption="Fumehood hotplates" widths="220px" heights="225px" perrow="5"> | ||
image:FumehoodHotplate in C-1.jpg|Fumehood hotplate for [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spinner_.28Polymers.29|Manual Spinner (Polymers)]]. | image:FumehoodHotplate in C-1.jpg|Fumehood hotplate for [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spinner_.28Polymers.29|Manual Spinner (Polymers)]]. | ||
image: | image:FumehoodHotplate in E-5.jpg|BHF in cleanroom C-1 (KOH bench 1+2.) The BHF bath is positioned between the two KOH baths. This is primarily used to remove oxide before and after a KOH etch. | ||
image:KOH3 RR4 1.JPG|BHF in cleanroom D-3 (KOH bench 6".) The BHF bath is positioned to the right. This is primarily used to remove oxide before and after a KOH etch. | image:KOH3 RR4 1.JPG|BHF in cleanroom D-3 (KOH bench 6".) The BHF bath is positioned to the right. This is primarily used to remove oxide before and after a KOH etch. | ||
image:Stinkskab RR2.jpg|PP-bath: positioned in the upper right corner of the fumehood in cleanroom B-1. </gallery> | image:Stinkskab RR2.jpg|PP-bath: positioned in the upper right corner of the fumehood in cleanroom B-1. </gallery> |
Revision as of 14:44, 6 November 2014
Feedback to this page: click here
Comparing baking methods
Hotplate: 90-110C | SU8 hotplates | Fumehood hotplates | Oven 90C | Oven: 120C - 250C | Oven 250C | |
---|---|---|---|---|---|---|
Purpose |
Programmable contact bake Soft bake, PEB |
Programmable, ramped contact bake Soft bake and PEB of SU-8 |
Manual contact bake Soft bake |
Manual convection bake Soft bake |
Manual convection bake Hard bake |
Manual convection bake Dehydration |
Temperature |
Maximum 120°C |
Maximum 250°C |
Maximum 300°C Maximum temperature may be limited on the individual hotplate |
Fixed at 90°C |
120 - 250°C Return to 120°C after use |
Fixed at 250°C |
Substrate size |
|
|
|
|
|
|
Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and polymer substrates Film or pattern of all types except type IV |
Respect the allowed materials on the associated spin coater |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and high Tg polymer substrates Film or pattern of all types except resist |
Restrictions | III-V, copper, steel substrates
Pb, Te films |
III-V substrates unless specifically stated
Respect the restrictions on the associated spin coater |
III-V substrates
Pb, Te films |
III-V, copper, steel substrates | Resist is not allowed |
Hotplates
Hotplate: 90-110C
Hotplate: 90-110C is used for baking of 2" - 6" wafers.
The user manual, and contact information can be found in LabManager: Hotplate: 90-110C
SU8 hotplates
We have two dedicated SU-8 hotplates in C-1.
Users can control the ramp-time, the baking temperature, and the baking time.
The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)
Fumehood hotplates
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
-
Fumehood hotplate for Manual Spinner (Polymers).
-
BHF in cleanroom C-1 (KOH bench 1+2.) The BHF bath is positioned between the two KOH baths. This is primarily used to remove oxide before and after a KOH etch.
-
BHF in cleanroom D-3 (KOH bench 6".) The BHF bath is positioned to the right. This is primarily used to remove oxide before and after a KOH etch.
-
PP-bath: positioned in the upper right corner of the fumehood in cleanroom B-1.
Ovens
Oven 90C
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
The user manual, and contact information can be found in LabManager: Oven 90C
Oven: 120C - 250C
Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist. The set-point can be varied, but should always be returned to 120°C after use.
The user manual, and contact information can be found in LabManager: Oven: 120C - 250C
Oven 250C for pretreatment
See Oven 250C