Specific Process Knowledge/Etch/Wet Aluminium Etch: Difference between revisions

Revision as of 11:48, 31 January 2008

Wet Aluminium Etch

Wet etching of aluminium is done with two different solutions:

HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} POFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} 1:2 at 50 ^oC
Pre-mixed etch solution: PES 77-19-04 at 20 ^oC

Both solutions are used in the Aluminium etch bath shown to the right. It must be written on which one is in. Solution no. 1 is the most used solution for etching aluminium. Solution no. 2 is primarily for etching aluminium mixed with a small percentage of silicon.

Comparing the two solutions

	Aluminium Etch 1	Aluminium Etch 2
General description	Etch of pure aluminium	Etch of aluminium + 1.5% Si
Chemical solution	HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} POFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} 1:2	PES 77-19-04
Process temperature	50 ^oC	20 ^oC
Possible masking materials:	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~100 nm/min (Pure Al)	~60(??) nm/min
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist

@@ Line 7: / Line 7: @@
 # Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
-Both solutions are used in the Aluminium etch bath shown to the right. I must be written on which one is in. Solution no. 1 is the most used solution for etchning oure aluminium. Solution no. 2 is primarily for etching aluminium mixed with a small percentage of silicon.
+Both solutions are used in the Aluminium etch bath shown to the right. It must be written on which one is in. Solution no. 1 is the most used solution for etching aluminium. Solution no. 2 is primarily for etching aluminium mixed with a small percentage of silicon.
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