Specific Process Knowledge/Thin film deposition: Difference between revisions
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[[/Deposition of Silicon|Silicon]] <br/> | [[/Deposition of Silicon|Silicon]] <br/> | ||
[[/Deposition of Germanium|Germanium]] | [[/Deposition of Germanium|Germanium]] <br/> | ||
[[/Lesker|Zinc Oxide (ZnO)]]<br/> | [[/Lesker|Zinc Oxide (ZnO)]]<br/> | ||
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[[/Lesker|Niobium]]<br/> | [[/Lesker|Niobium]]<br/> | ||
[[/Lesker|Ruthenium]]<br/> | [[/Lesker|Ruthenium]]<br/> | ||
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[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/> | [[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/> | ||
[[/Deposition of NiCr|NiCr]] alloy <br/> | [[/Deposition of NiCr|NiCr]] alloy <br/> | ||
[[/Deposition of AlTi|AlTi]] alloy <br/> | [[/Deposition of AlTi|AlTi]] alloy <br/> | ||
[[/Deposition of NiV|NiV]] alloy | [[/Deposition of NiV|NiV]] alloy <br/> | ||
[[/Lesker|AlCu]]<br/> | [[/Lesker|AlCu]]<br/> | ||
[[/Lesker|CoFe]]<br/> | [[/Lesker|CoFe]]<br/> | ||
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[[/Lesker|NiCo]]<br/> | [[/Lesker|NiCo]]<br/> | ||
[[/Lesker|NiFe]]<br/> | [[/Lesker|NiFe]]<br/> | ||
[[/Lesker| | [[/Lesker|YSZ (Yttrium stabilized Zirconium)]]<br/> | ||
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ITO | [[/Lesker|ITO (Tin doped Indium Oxide)]]<br/> | ||
[[/Lesker|AZO (Aluminum doped Zinc Oxide]]<br/> | |||
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[[Specific Process Knowledge/Photolithography/SU8|SU8]]<br/> | [[Specific Process Knowledge/Photolithography/SU8|SU8]]<br/> |
Revision as of 09:45, 5 November 2014
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Choose material to deposit
Dielectrica | Semicondutors | Metals | Alloys | Transparent conductive oxides | Polymers |
Silicon Nitride - and oxynitride |
Aluminium |
TiW alloy (10%/90% by weight) |
SU8 |
Choose deposition equipment
PVD | LPCVD | PECVD | ALD | Coaters | Others
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See the Lithography/Coaters page for coating polymers |
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