Specific Process Knowledge: Difference between revisions

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|[[Specific Process Knowledge/Characterization|Characterization]]
|[[Specific Process Knowledge/Characterization|Characterization]]
|Sample Imaging, XY dimensions
|Sample Imaging, XY dimensions
|Microscopy: optical,SEM,AFM
|Microscopy: optical, SEM, AFM
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|Sample Topography
|Sample Topography
|AFM,Profiling with stylus or optical
|AFM, Profiling with stylus or optical
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|Film thickness and optical constants
|Film thickness and optical constants
|Ellipsometry,Reflectometry,Prism Coupling
|Ellipsometry, Reflectometry, Prism Coupling
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|Wafer thickness
|Wafer thickness
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|Micrometer gauge
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|Element analysis
|Element analysis
|XPS,EDX,SIMS
|XPS, EDX, SIMS
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|Resistivity
|Resistivity
|Four point probe
|Four point probe, Probe station
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|Doping level/Carrier density
|Doping level/Carrier density
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|ECV (Electrochemical Capacitance-Voltage) -profiler
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|Direct Bandgap
|Photoluminescence
|Photoluminescence
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|Lattice mismatch
|X-ray diffractometer
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|Defects/contamination
|Particle/defect counter
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Revision as of 09:07, 5 November 2014

2nd Level - Process Topic

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Choose the process topic you are interested in

The section below here is under construction

Overview of sample processing

Clean your sample Dry your sample Create a thin film on your sample Dope your sample
Thermal treatment of your sample Make a mask on your sample Transfer pattern to your sample Define your structure directly
Bond your samples together Characterize your sample Pack your sample  



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