Specific Process Knowledge/Doping: Difference between revisions
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|Dopants introduced by diffusion from gas-phase (POCl<sub>3</sub>). A thin phosphorous glass is formed on the substrate and phosphorous atoms are driven in. The phosphorous glass is afterward removed by a short BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done in either high temperature annealing furnaces or by rapid thermal annealing. | |Dopants introduced by diffusion from gas-phase (POCl<sub>3</sub>). A thin phosphorous glass is formed on the substrate and phosphorous atoms are driven in. The phosphorous glass is afterward removed by a short BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done at 800°C - 1150°C in either high temperature annealing furnaces or by rapid thermal annealing. | ||
|Dopants introduced by diffusion from solid source wafers. A boron glass is formed on the substrate and boron atoms are driven in. The boron glass is afterward removed by a dry oxidation process in the boron drive in furnace (A1) followed by a BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done in either high temperature annealing furnaces or by rapid thermal annealing. | |Dopants introduced by diffusion from solid source wafers containing B<sub>2</sub>O<sub>3</sub>. A boron glass is formed on the substrate and boron atoms are driven in. The boron glass is afterward removed by a dry oxidation process in the boron drive in furnace (A1) followed by a BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done at 800°C - 1150°C in either high temperature annealing furnaces or by rapid thermal annealing. | ||
|Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - | |Deposition of doped thin film (oxides or nitrides). A high temperature step to drive in and redistribute the dopants in the material is required. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. The doped glass can afterwards be removed in a BHF etch. | ||
|Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | |Dopants introduced by in-situ doping of poly/amorphous Si. In some cases you need a high temperature step to redistribute the dopants in the material and alter the crystallinity. This is typically done at 800°C - 1150°C in either high temperature annealing furnaces (C1 or C3) or by rapid thermal annealing. | ||
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