Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
| Line 38: | Line 38: | ||
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|Possible masking materials: | |Possible masking materials: | ||
|Stoichiometric Si<math>_3</math>N<math>_4</math> | | | ||
Stoichiometric Si<math>_3</math>N<math>_4</math> | |||
Si-rich Si<math>_3</math>N<math>_4</math> | Si-rich Si<math>_3</math>N<math>_4</math> | ||
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Thermal SiO<math>_2</math> | Thermal SiO<math>_2</math> | ||
| | | | ||
Stoichiometric Si<math>_3</math>N<math>_4</math> | Stoichiometric Si<math>_3</math>N<math>_4</math> | ||
| Line 53: | Line 54: | ||
Thermal SiO<math>_2</math> | Thermal SiO<math>_2</math> | ||
|- | |- | ||
|Etch rate | |Etch rate | ||
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<br clear="all" /> | <br clear="all" /> | ||
===Definition of structures=== | ===Definition of structures=== | ||