Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions
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* 20 nm (limited by instrument) | * 20 nm (limited by instrument) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics | ||
|style="background:LightGrey; color:black"|Detectors | |style="background:LightGrey; color:black"|Detectors | ||
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* Secondary electron (Se2) | * Secondary electron (Se2) | ||
* Inlens secondary electron (Inlens) | * Inlens secondary electron (Inlens) | ||
* Backscatter electron ( | * Backscatter electron (BSD) | ||
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* Secondary electron (Se2) | * Secondary electron (Se2) | ||
* Inlens secondary electron (Inlens) | * Inlens secondary electron (Inlens) | ||
* Backscatter electron (QBSD) | * 4 Quadrant Backscatter electron (QBSD) (out of order) | ||
* Variable pressure secondary electron (VPSE) | * Variable pressure secondary electron (VPSE) | ||
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* Secondary electron (Se2) | * Secondary electron (Se2) | ||
* Inlens secondary electron (Inlens) | * Inlens secondary electron (Inlens) | ||
* Backscatter electron (QBSD) | * 4 Quadrant Backscatter electron (QBSD) | ||
* Variable pressure secondary electron (VPSE) | * Variable pressure secondary electron (VPSE) | ||
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* Fixed at High vacuum | * Fixed at High vacuum | ||
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|style="background:LightGrey; color:black"|Options | |||
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* Raith Elphy Quantum E-Beam Litography system | |||
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* All software options available | |||
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* Fjeld M-200 airlock taking up to 8" wafers | |||
* Oxford Instruments X-Max<sup>N</sup> 50 mm<sup>2</sup> SDD EDX detector and AZtec software package | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||