Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions
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|style="background:WhiteSmoke; color:black" align="center"|[[/Zeiss|SEM Zeiss]] | |style="background:WhiteSmoke; color:black" align="center"|[[/Zeiss|SEM Zeiss]] | ||
|style="background:WhiteSmoke; color:black" align="center"|[[/Supra60VP|SEM Supra 60VP]] | |style="background:WhiteSmoke; color:black" align="center"|[[/Supra60VP|SEM Supra 60VP]] | ||
|style="background:WhiteSmoke; color:black" align="center"|[[/Jeol|SEM Jeol]] | |style="background:WhiteSmoke; color:black" align="center"|[[/Jeol|SEM Jeol]] | ||
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|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP | |style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP | ||
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP | |style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP | ||
|style="background:WhiteSmoke; color:black" align="center"| Jeol JSM 5500 LV | |style="background:WhiteSmoke; color:black" align="center"| Jeol JSM 5500 LV | ||
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* Any sample except bulk insulators such as polymers, glass or quartz wafers | * Any sample except bulk insulators such as polymers, glass or quartz wafers | ||
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* Samples from the 'real' world outside the lab | * Samples from the 'real' world outside the lab | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
|style="background:LightGrey; color:black" rowspan="2"|Resolution | |style="background:LightGrey; color:black" rowspan="2"|Resolution | ||
|style="background:Whitesmoke; color:black" colspan=" | |style="background:Whitesmoke; color:black" colspan="4" align="center"| The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples | ||
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* ~ 5 nanometers (limited by vibrations) | * ~ 5 nanometers (limited by vibrations) | ||
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* 1-2 nm (limited by vibrations) | * 1-2 nm (limited by vibrations) | ||
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* Backscatter electron (QBSD) | * Backscatter electron (QBSD) | ||
* Variable pressure secondary electron (VPSE) | * Variable pressure secondary electron (VPSE) | ||
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* Secondary electron (SEI) | * Secondary electron (SEI) | ||
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* R: 360<sup>o</sup> | * R: 360<sup>o</sup> | ||
* Z: XXX mm | * Z: XXX mm | ||
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* X, Y: 73 × 40 mm | * X, Y: 73 × 40 mm | ||
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|style="background:LightGrey; color:black"|Electron source | |style="background:LightGrey; color:black"|Electron source | ||
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* FEG (Field Emission Gun) source | * FEG (Field Emission Gun) source | ||
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* Fixed at High vacuum (2 × 10<sup>-5</sup>mbar - 10<sup>-6</sup>mbar) | * Fixed at High vacuum (2 × 10<sup>-5</sup>mbar - 10<sup>-6</sup>mbar) | ||
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* Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | * Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | ||
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* Up to 8" wafer with 6" view | * Up to 8" wafer with 6" view | ||
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* Up to 4" wafer | * Up to 4" wafer | ||
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* Any standard cleanroom material except graphene or CNT samples | * Any standard cleanroom material except graphene or CNT samples | ||
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* Any standard cleanroom material including graphene or CNT samples | * Any standard cleanroom material including graphene or CNT samples | ||
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==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||