Specific Process Knowledge/Characterization: Difference between revisions
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== Choose equipment == | == Choose equipment == | ||
*[[/SEM: Scanning Electron Microscopy |SEM LEO]] | *[[/SEM: Scanning Electron Microscopy |SEM LEO]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM JEOL]] | *[[/SEM: Scanning Electron Microscopy |SEM JEOL]] | ||
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*[[Specific Process Knowledge/III-V Process/characterisation/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | *[[Specific Process Knowledge/III-V Process/characterisation/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | ||
*[[Specific Process Knowledge/III-V Process/characterisation/X-Ray Diffractometer |X-Ray Diffractometer ]] | *[[Specific Process Knowledge/III-V Process/characterisation/X-Ray Diffractometer |X-Ray Diffractometer ]] | ||
*[[/SEM: Scanning Electron Microscopy |SEM FEI - ''This instrument has been relocated to CEN'']] | |||
Revision as of 07:50, 30 October 2014
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy