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The ALD window for depostion of Titanium oxide ranges from 120 ^oC to 350 ^oC. XPS measurements shows that at temperatures below 120 ^oC the TiO₃ layer will be contaminated by Cl molecules.

All results shown on this page have been obtained using the "TiO2" recipe on new Si(100) wafers with native oxide:

Recipe: TiO2

Temperature: 150 ^oC - 350 ^oC

	TMA	H₂O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.1 s
Purge time	3.0 s	4.0 s

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 =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
+'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''
+The ALD window for depostion of Titanium oxide ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C. XPS measurements shows that at temperatures below 120 <sup>o</sup>C the TiO<sub>3</sub> layer will be contaminated by Cl molecules.
+All results shown on this page have been obtained using the "TiO2" recipe on new Si(100) wafers with native oxide:
+<b>Recipe</b>: TiO2
+<b>Temperature</b>: 150 <sup>o</sup>C - 350 <sup>o</sup>C
+{| border="2" cellspacing="2" cellpadding="5"  align="none"
+|-
+|
+!TMA
+!H<sub>2</sub>O
+|-
+!Nitrogen flow
+|150 sccm
+|200 sccm
+|-
+!Pulse time
+|0.1 s
+|0.1 s
+|-
+!Purge time
+|3.0 s
+|4.0 s
+|-
+|}