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Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium: Difference between revisions

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|~350 nm/min (depending on features size and etch load)  
|~350 nm/min (depending on features size and etch load)  
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Al etch''' ''made by Chantal Silvetre@danchip October 2014''
|-
! rowspan="2" | Parameter
! colspan="2" | Process step
|-
! width="200" | Breakthrough
! width="200" | Main
|-
! Time (secs)
| 20
| 40 (variable)
|-
! HBr (sccm)
| -
| 15
|-
! Cl<sub>2</sub> (sccm)
| 20
| 25
|-
! Pressure (mTorr)
| 2,  Strike 3 secs @ 15 mTorr???
| 1
|-
! Coil power (W)
| 600
| 500
|-
! Platen power (W)
| 125
| 100
|-
! Temperature (<sup>o</sup>C)
| 20
| 20
|-
! Spacers (mm)
| 100
| 100
|-
!Results
|
|
|-
!Etch rate
|
|~282 nm/min (depending on features size and etch load)
|}
|}