Specific Process Knowledge/Lithography/Baking: Difference between revisions
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[[Image:Oven_90_degrees_cr3.jpg|300x300px|thumb|Oven 90 °C: positioned in C-1]] | [[Image:Oven_90_degrees_cr3.jpg|300x300px|thumb|Oven 90 °C: positioned in C-1]] | ||
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min. | The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min. | ||
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