Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
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Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. | Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. | ||
''Flow names and process parameters | ''Flow names and process parameters (Sequence no. 2000-2999):'' | ||
*'''DCH PEB 110C 60s''' | *'''DCH PEB 110C 60s''' | ||
Process parameters: 60s bake at 110°C. 20s cool at 20°C. | Process parameters: 60s bake at 110°C. 20s cool at 20°C. | ||