Jump to content

Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

← Older editNewer edit →
VisualWikitext
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,527 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,527 edits
Line 35: Line 35:
After development, the substrate is rinsed using DI water, and dried using nitrogen.
After development, the substrate is rinsed using DI water, and dried using nitrogen.


The standard rinse and dry procedure is 30s at 4000rpm with DIW being administered from the top at the center of the substrate, followed by a 10-15s dry using nitrogen from the top at the center of the substrate. The top side rinse is at a rate of approximately 500 ml/min, corresponding to 250 ml DIW during the rinse. The flow rate of the nitrogen is 50 l/min, and the drying time is set according to the size of the substrate.
The standard rinse and dry procedure is 30s at 4000 rpm with DIW being administered from the top at the center of the substrate, followed by a 10-15s dry at 3000 rpm using nitrogen from the top at the center of the substrate. The top side rinse is at a rate of approximately 500 ml/min, corresponding to 250 ml DIW during the rinse. The flow rate of the nitrogen is 50 l/min, and the drying time is set according to the size of the substrate.


=Standard Processes=
=Standard Processes=
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing"