Jump to content

Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
Line 24: Line 24:
*Spin-off
*Spin-off


Pre-wet may be done using developer or DI water, or it may be skipped.
Pre-wet may be done using developer or DI water, or it may be skipped. It consists of a short dispense at medium spin speed (2s @ 1200 rpm).


Puddle dispense is done by dispensing developer (AZ 726 MIF) to the center of the wafer at a rate of approximately 225 ml/min. During the dispense, the wafer may be stopped or rotating slowly (30 rpm). A dispense time of 3s, and 7s is used for 4", and 6" wafers, respectively, corresponding to a volume of 11 ml, and 26 ml, respectively.
Puddle dispense is done by dispensing developer (AZ 726 MIF) to the center of the wafer at a rate of approximately 225 ml/min. During the dispense, the wafer may be stopped or rotating slowly (30 rpm). A dispense time of 3s, and 7s is used for 4", and 6" wafers, respectively, corresponding to a volume of 11 ml, and 26 ml, respectively.


Development is carried out by leaving the developer puddle on the wafer for the duration of the development time. The rotation is stopped during the development, but the developer may be agitated by rotating the wafer a few turns at low speed (e.g. 2s @ 30 rpm halfway through the development time) in order to facilitate good uniformity.
Development is carried out by leaving the developer puddle on the wafer for the duration of the development time. The rotation is stopped during the development, but the developer may be agitated by rotating the wafer a few turns at low speed, e.g. 2s @ 30 rpm halfway through the development time, in order to facilitate good uniformity.


Spin-off is designed to stop the development by removing the developer from the wafer before the rinse. It is usually carried out as a short spin at high speed (3s @ 4000 rpm), but may be omitted.
Spin-off is designed to stop the development by removing the developer from the wafer before the rinse. It is usually carried out as a short spin at high speed (3s @ 4000 rpm), but may be omitted.