Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

Revision as of 09:17, 31 January 2008

Etching of Chromium

Etching of chromium is done wet at Danchip making your own set up in a beaker in a fumehood - preferably in cleanroom 2 or 4. We have two solution for this:

HNO $_{3}$ :H $_{2}$ O:cerisulphate - 90ml:1200ml:15g - standard at Danchip
Commercial chromium etch

Etch rate are depending on the level of oxidation of the metal.

	Chromium etch 1	Chromium etch 2
General description	Etch of chromium	Etch of chronium
Chemical solution	HNO $_{3}$ :H $_{2}$ O:cerisulphate - 90ml:1200ml:15g	Commercial chromium etch CE 8002-A
Process temperature	Room temperature	Room temperature
Possible masking materials:	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~40-100 nm/min	~10-20 nm/min
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist

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 ==Etching of Chromium==
-Etching of chromium is done wet at Danchip making your own set up in a beaker in the fumehood. We have two solution for this:
+Etching of chromium is done wet at Danchip making your own set up in a beaker in a fumehood - preferably in cleanroom 2 or 4. We have two solution for this:
 # HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g - standard at Danchip