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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
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|Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods.  
|Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods.  
|Sputter deposition: can be done ontop of a large range of materials
|Sputter deposition: can be done ontop of a large range of materials
|E-beam evaporation of siliconoxide
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*
*
| Not measured
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*~10nm - ~1µm(>2h)
*~10nm - ~1µm(>2h)
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* Thin layers (up to 200-300 nm)
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* Thin layers (up to 200-300 nm)
* Thin layers (up to 200-300 nm)
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*
*
| 20-250 <sup>o</sup>C
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*Not known
*Not known
*Deposition on one side of the substrate
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*Not Known
*Deposition on one side of the substrate
*Deposition on one side of the substrate
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*Less dense film
*Less dense film
*Incorporation of hydrogen in the film
*Incorporation of hydrogen in the film
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*
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*
*
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*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
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*Pieces or
*1x2" wafer
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* Metals  
* Metals  
* Carbon
* Carbon
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* Silicon
* Silicon oxide
* Silicon nitride
* Photoresist
* Metals
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