Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]] | |||
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|Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods. | |Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods. | ||
|Sputter deposition: can be done ontop of a large range of materials | |Sputter deposition: can be done ontop of a large range of materials | ||
|E-beam evaporation of siliconoxide | |||
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* | * | ||
| Not measured | |||
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*~10nm - ~1µm(>2h) | *~10nm - ~1µm(>2h) | ||
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* Thin layers (up to 200-300 nm) | |||
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* Thin layers (up to 200-300 nm) | * Thin layers (up to 200-300 nm) | ||
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* | * | ||
| 20-250 <sup>o</sup>C | |||
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*Not known | *Not known | ||
*Deposition on one side of the substrate | |||
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*Not Known | |||
*Deposition on one side of the substrate | *Deposition on one side of the substrate | ||
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*Less dense film | *Less dense film | ||
*Incorporation of hydrogen in the film | *Incorporation of hydrogen in the film | ||
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* | * | ||
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*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
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*Pieces or | |||
*1x2" wafer | |||
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* Metals | * Metals | ||
* Carbon | * Carbon | ||
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* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Photoresist | |||
* Metals | |||
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