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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]])
|-  
|-  
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| Sputter deposition of Si. '''Not''' recommended as first choice for Si deposition.
| Sputter deposition of Si. '''Not''' recommended as first choice for Si deposition.
| Sputter deposition of Si.
| E-beam evaporation of Si.
| E-beam evaporation of Si.
|-
|-
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|None
|None
|Can be doped with boron or phosphorus during deposition
|Can be doped with boron or phosphorus during deposition
|None
|None
|None
|None
|None
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|RF Ar clean
|RF Ar clean
|None
|None
|RF Ar clean
|RF Ar clean
|RF Ar clean
| 
| 
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|No defined limits
|No defined limits
|10Å to 2000Å  
|10Å to 2000Å  
|
|10Å to 2500Å  
|10Å to 2500Å  
|-
|-
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| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
|2Å/s to 8Å/s (see below).
|2Å/s to 8Å/s (see below).
| Depends on process parameters, roughly 1 Å/s.
|1Å/s to 5Å/s (see below).
|1Å/s to 5Å/s (see below).
|-
|-
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|Platen: 5-60 <sup>o</sup>C
|Platen: 5-60 <sup>o</sup>C
|?
|?
|Wafers can be heated to 100-200°C
|20-250 <sup>o</sup>C
|20-250 <sup>o</sup>C
|-
|-
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|Not known
|Not known
|Poor
|Poor
|
|Poor
|Poor
|-
|-
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|Not tested
|Not tested
|Bad for pyrex, for other materials we do not know
|Bad for pyrex, for other materials we do not know
|&nbsp;
|&nbsp;
|&nbsp;
|-
|-
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*Up to 1x4" wafers
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
* Up to 1x6" wafers
* smaller pieces
|
|
* 2"
* 2"
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|
|
*Same materials as on the allowed materials below
*Same materials as on the allowed materials below
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers
|
|
* Silicon wafers
* Silicon wafers
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* SU-8
* SU-8
* Metals  
* Metals  
|    
|  
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* Metals
|     
* III-V materials
* III-V materials
* Silicon wafers
* Silicon wafers
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| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.
| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.
| This process is not running really stable nowadays.
| This process is not running really stable nowadays.
|
| &nbsp;
| &nbsp;
|}
|}
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