Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
No edit summary |
|||
Line 32: | Line 32: | ||
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
Line 43: | Line 43: | ||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
| E-beam deposition of Ag | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
Line 55: | Line 55: | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
| | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
Line 66: | Line 66: | ||
|10Å to about 5000Å | |10Å to about 5000Å | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
|10Å to about 1000Å | |||
|10Å to about 1000Å | |10Å to about 1000Å | ||
|- | |- | ||
Line 78: | Line 79: | ||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | ||
|Dependent on process parameters. | |Dependent on process parameters. | ||
|2 Å/s to 5 Å/s | |||
|- | |- | ||
Line 111: | Line 113: | ||
*1x4" wafers or | *1x4" wafers or | ||
*smaller pieces | *smaller pieces | ||
| | |||
* 2" wafers or | |||
* Smaller pieces | |||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
Line 175: | Line 181: | ||
* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
|-style="background:whitesmoke; color:black" | |-style="background:whitesmoke; color:black" | ||
! Comment | ! Comment | ||
Line 180: | Line 194: | ||
|Only very thin layers. | |Only very thin layers. | ||
|Only very thin layers (up to 100nm). | |Only very thin layers (up to 100nm). | ||
| | |||
| | | | ||
| | | |
Revision as of 09:55, 20 October 2014
Feedback to this page: click here
Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
- Sputter deposition of Silver in PVD so-sputter/evaporation.
- Sputter deposition of Silver in Wordentec.
Thermal deposition of Silver
E-beam evaporation (Alcatel) | Thermal evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | E-beam evaporation (Physimeca) | Sputter evaporation (PVD co-sputter/evaporation) | Sputter evaporation (Wordentec) | Sputter deposition (Lesker) | E-beam evaporation (III-V Dielectric evaporator) | |
---|---|---|---|---|---|---|---|---|
General description | E-beam deposition of Ag | Thermal deposition of Ag | E-beam deposition of Ag | E-beam deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | E-beam deposition of Ag |
Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | ||
Layer thickness | 10Å to 1µm* | 10Å to 0.5µm (0.5µm not on all wafers) | 10Å to 1000Å | 10Å to 2000Å | 10Å to about 5000Å | 10Å to about 3000Å | 10Å to about 1000Å | 10Å to about 1000Å |
Deposition rate | 2Å/s to 15Å/s | 1Å/s to 10 Å/s | About 1Å/s | 1 to 10Å/s | Dependent on process parameters. | Depending on process parameters (also written in the logbook). | Dependent on process parameters. | 2 Å/s to 5 Å/s |
Batch size |
|
|
|
|
|
|
|
|
Allowed materials |
|
|
|
|
|
|
|
|
Comment | Only very thin layers. | Only very thin layers (up to 100nm). |
* For thicknesses above 200 nm permission is required.